Low stress conductive polymer bump

ABSTRACT

Disclosed is a laminated (or non-laminated) conductive interconnection for joining an integrated circuit device to a device carrier, where the conductive interconnection comprises alternating metal layers and polymer layers. In addition, the polymer can include dendrites, metal projections from the carrier or device, and/or micelle brushes on the outer portion of the polymer. The polymer layers include metal particles and the alternating metal layers and polymer layers form either a cube-shaped structure or a cylinder-shaped structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.10/711,185 filed Aug. 31, 2004 now U.S. Pat. No. 7,170,187.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to conductive interconnectionsand more particularly involves conductive interconnections that utilizethermoplastic conductive adhesives having metal particles therein

2. Description of the Related Art

A variety of isotropic and anisotropic conductive adhesives have beenused for chip joining applications in the past and currently. These tendto have limitations in terms of conductor size, pitch, complexity,conductivity, stability, resistance to electromigration, and long termreliability. One particular type of isotropic adhesive employsthermoplastic polymers which incorporate various metal particles inselected forms and shapes to provide an electrically conductive pathbetween the semiconductor device and device carrier. Such adhesive bumpsmay be assembled using controlled application of temperature andpressure for a designated range of time to form an electricalinterconnect. These interconnects can then be underfilled withepoxy-based materials to provide a permanent mechanical supportingstructure to maintain the electrical interconnection for circuit packagechip production.

SUMMARY OF THE INVENTION

In one embodiment, the invention provides a laminated conductiveinterconnection for joining an integrated circuit device to a devicecarrier, where the conductive interconnection comprises alternatingmetal layers and polymer layers. The polymer layers include metalparticles and the alternating metal layers and polymer layers formeither a cube-shaped structure or a cylinder-shaped structure. Thealternating metal layers and polymer layers can be positionedsubstantially parallel or substantially perpendicular to the devicecarrier and the integrated circuit device. The polymer layers comprise athermoset polymer (thermoplastic conductive adhesive).

In another embodiment, the invention provides a conductiveinterconnection that has a spherical-shaped or cylinder-shaped polymerand metal projections extending from the integrated circuit device andthe device carrier. These metal projections extend partially into thepolymer and can have a cone-shape (which is triangular when viewed incross-section). The projections can extend from either or both theintegrated device and the device carrier. In this embodiment, thepolymer also includes metal particles.

A different embodiment comprises a similar spherical-shaped orcylinder-shaped polymer that has dendrites within the polymer. Again,the polymer includes metal particles. These dendrites comprise a coatingof palladium on the silver (or alternate) metal particles and arepositioned irregularly within the polymer such that they enhance theintercalation of the silver particle network.

A further embodiment again has a spherical-shaped or cylinder-shapedpolymer that has bipolar or bifunctional micelle brushes on the outersurface of the polymer. One end of the micelle brushes has an affinityfor the polymer and the other end of the brushes has an affinity for theintegrated circuit device underbump metallurgy (UBM) and/or the devicecarrier pad metallurgy. Again, the polymer includes metal particles.These micelle brushes comprise self assembled particles that haveenhanced adhesion with one end of the micelle brushes having an affinityfor the metal and metal pads and the other end of the micelle brusheshaving an affinity for the polymer. An example of the metal reactive endof the micelle brushes is a thiol moiety while the opposite end of themicelle brushes may be an organic tail which reacts or associates withthe polymer in the bump or underfill.

Thus, disclosed is a laminated (or non-laminated) conductiveinterconnection for joining an integrated circuit device to a devicecarrier, where the conductive interconnection comprises alternatingmetal layers and polymer layers. In addition, the polymer can includedendrites, metal projections from the carrier or device, and/or micellebrushes on the outer portion of the polymer. The polymer layers includemetal particles and the alternating metal layers and polymer layers formeither a cube-shaped structure or a cylinder-shaped structure. These,and other, aspects and objects of the present invention will be betterappreciated and understood when considered in conjunction with thefollowing description and the accompanying drawings. It should beunderstood, however, that the following description, while indicatingpreferred embodiments of the present invention and numerous specificdetails thereof, is given by way of illustration and not of limitation.Many changes and modifications may be made within the scope of thepresent invention without departing from the spirit thereof, and theinvention includes all such modifications.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be better understood from the following detaileddescription with reference to the drawings, in which:

FIG. 1 is a cross-sectional schematic diagram of an interconnectstructure;

FIG. 2 is a cross-sectional schematic diagram of an interconnectstructure;

FIG. 3 is a cross-sectional schematic diagram of an interconnectstructure;

FIG. 4 is a cross-sectional schematic diagram of an interconnectstructure; and

FIG. 5 is a cross-sectional schematic diagram of an interconnectstructure.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

The present invention and the various features and advantageous detailsthereof are explained more fully with reference to the nonlimitingembodiments that are illustrated in the accompanying drawings anddetailed in the following description. It should be noted that thefeatures illustrated in the drawings are not necessarily drawn to scale.Descriptions of well-known components and processing techniques areomitted so as to not unnecessarily obscure the present invention. Theexamples used herein are intended merely to facilitate an understandingof ways in which the invention may be practiced and to further enablethose of skill in the art to practice the invention. Accordingly, theexamples should not be construed as limiting the scope of the invention.

As described in greater detail below, the invention utilizes a flexiblepolymer matrix (such as polyimide siloxane polymer matrix) containingmetal particles, such as silver, nickel-iron, gold, copper, palladium,metal alloys and/or, other conductors. All such metals should beselected for low alpha emission properties so as to minimize soft errorsin semiconductor devices packaged using such materials. This type ofconductive interconnect is sometimes referred to as a “bump.”

Such a polymer matrix can be formed by a number of different methods,such as transient liquid phase alloy reaction as disclosed in U.S. Pat.No. 6,199,751, and incorporated herein by reference. The isotropicthermoplastic conductive adhesive used with the invention can also beformulated as a screenable paste including a solvent of benzyl acetateor ethyl acetate. Alternate formulations can also be used in whichconductive balls or decals can be fabricated for application to thedevice pads or even metal columns. The bumped device once formed can beeasily stripped of the conductive adhesive by application of the benzylacetate solvent to provide for reworkability.

Such bumped devices can be joined to various types of chip carriers suchas glass, ceramic, or organic chip carriers using controlled temperatureand pressure over a designated period of time, thus aligning the metalparticles to form an intercalated network. This process may be assistedby application of an electrical, a magnetic, or a radio frequency fieldto orient and interconnect the metal particles within the polymer matrixwhile forming the electrical joint.

With the invention, this conductive polymer may be applied in a cube orcylindrical shape (FIGS. 1-2), or a hemispherical or cylindrical shape(see FIGS. 3-5). In the drawings, items 110 and 112 represent the device(e.g., integrated circuit chip, etc.) and device carrier, respectively.Typically, the device surface 110 will be coated with a precious metalsuch as gold or even palladium with dendrites to enhance stability ofthe contact and promote conductivity.

In FIG. 1, the invention provides a laminated conductive interconnection100 for joining an integrated circuit device 110 to a device carrier112, where the conductive interconnection comprises alternating metallayers 104 and polymer layers 102. As shown in the drawings, the polymerlayers 102 include metal particles and the alternating metal layers 104and polymer layers 102 form either a substantially cube-shaped structureor a substantially cylinder-shaped structure. The alternating metallayers 104 and polymer layers 102 can be positioned substantiallyparallel or substantially perpendicular to the device carrier 112 andthe integrated circuit device 110. As mentioned above, the polymerlayers 102 can comprise a thermoset polymer (thermoplastic conductiveadhesive).

The conductive interconnect 100 can be formed by alternatelydepositing/forming, the polymer 102 and metal 104 layers until thedesired number of layers are formed. Then, the layers can be patternedusing any conventional patterning technique (such as masking andetching) to pattern the interconnects 100 on either the device 110 orthe carrier 112. Alternatively, the laminated structure can be diced andthen deposited onto the device 110 or the carrier 112 and, therefore,can be positioned as shown in FIG. 1 or FIG. 2.

In another embodiment shown in FIG. 3, the invention provides aconductive interconnection 300 that has a spherical-shaped (rounded)polymer 302 and metal projections 304 extending towards the polymer fromthe integrated circuit device 110 and/or the device carrier 112. Each ofthe metal projections 304 has approximately the same height. These metalprojections 304 extend partially into the polymer 302 across the widthof the polymer 302 and can have a cone shape (which is triangular whenviewed in cross-section). The projections 304 can extend from either orboth the integrated device 110 and the device carrier 112. In thisembodiment, the polymer 302 also includes metal particles. Preferably,the projections 304 are formed first on the device 110 and/or thecarrier 112 by depositing a metal layer and then patterning the metallayer into the projection shapes 304. Then, the polymer 302 is depositedone either the device 110 or the carrier 112 and the device 110 and thecarrier 112 are then joined together.

Shown in FIG. 4 is a different embodiment that provides an interconnect400 that has a similar spherical-shaped polymer 402 and dendrites 404within the polymer 402. Again, the polymer includes metal particles.These dendrites 404 comprise a plated coating of palladium on theconductive metal (such as silver) and are positioned irregularly withinthe polymer 402. The dendrites 404 are preferably mixed with the polymer402 before the polymer 402 is deposited on either the device 110 or thecarrier 112.

A further embodiment of an interconnect 500 is shown in FIG. 5. Thisembodiment again has a spherical-shaped polymer 502 that has micellebrushes 504 on the outer surface of the polymer. One end of each micellebrush 504 has an affinity for the polymer 502 and the other end of thebrushes 504 has an affinity for the integrated circuit device 110 andthe device carrier 112. These micelle brushes 504 therefore help bondthe polymer 502 to the device 110 and carrier 112 or pads 506 thereon.Again, the polymer includes metal particles. These micelle brushes maycomprise a thiol or other reactive moiety at one end which may readilyreact with metal surfaces and an organic tail which may react orassociate with the polymer matrix or underfill which act via selfassembly on contact with metal and polymer. In this embodiment, thesurface of the polymer bumps 502 is functionalized with chemistry 504which readily bonds to the under-bump metallurgy, such as a —thiolchemistry to coinage metal, in order to assist in the attachment andalignment of the polymer-derived C4 bumps.

After forming any of the conductive, thermoplastic adhesiveinterconnects (joints) 100, 300, 400, 500, discussed above, theinterconnects can be protected from mechanical damage by underfill whichcan be either permanent or reworkable. Once underfilled, the resultingmodule is as durable as structures using Sn/Pb solder joints. Further,each embodiment is not mutually exclusive to the other embodiments.Therefore, the inventive structure can include the polymer combined withthe dendrites 404, the projection studs 304, the micelle brushes 502,and/or can be formed as a laminated structure or a spherical structure.

Assembly can be performed using commercially available equipment attemperatures of, for example, 220 C. The resulting joints can bereworked using solvent to dissolve the joints and reuse the chip 110 orchip carrier 112 if required. The joints, once formed, are electricallyconductive and can be used for temporary chip attachment for test andrework if required.

The joints incorporated into the circuit package can be made Pb-free.Therefore, they are not subject to typical problems with secondaryreflow seen with lead-based solder in conventional structures. Thejoints can be designed as inherently low alpha emitting to minimize softerror rates in devices. Insulation resistance and stress test durabilityin temperature/humidity/bias and thermal cycling environments areexcellent based on the ability of the conductive adhesive to encapsulatethe metals within it and form a somewhat flexible electrical jointstructure, which can more closely match the thermal coefficient ofexpansion of the underfill and organic chip carrier 112. The organicpolymer adhesive forms a strong bond with the underfill such that littleseparation or delamination occurs during secondary thermal excursion tohigh assembly temperatures for card attachment and board processing.Another advantage of these structures is that the size and pitch can beeasily scaled from large sizes and pitches such as 0.008″/0.015″ to0.003″/0.006″ or smaller.

The invention provides a number of advantages compared to currentlyavailable structures. The invention uses easily processed materials withconventional formulation and application equipment. The materials arereworkable after initial application without damage to the device 110.The materials are amenable to wafer scale processing. The structuresformed are mechanically stable as bumps on the wafer and can be dicedusing conventional equipment. The invention has enhanced mechanicalstrength and bonding at interfaces, enhanced structural integrity, easeof assembly.

While the invention has been described in terms of preferredembodiments, those skilled in the art will recognize that the inventioncan be practiced with modification within the spirit and scope of theappended claims.

1. A conductive interconnection for joining an integrated circuit deviceto a device carrier, said conductive interconnection comprising: apolymer having a spherical shape between said integrated circuit deviceand said device carrier; and patterned metal projections extendingtowards said polymer from at least one of said integrated circuit deviceand said device carrier, wherein said patterned metal projections eachhave a same height and extend partially into said polymer across thewidth of said polymer.
 2. The conductive interconnection according toclaim 1, all the limitations of which are incorporated by reference,wherein said patterned metal projections have a triangular shape incross-section.
 3. The conductive interconnection according to claim 1,all the limitations of which are incorporated by reference, wherein saidpatterned metal projections have a cone-shape.
 4. The conductiveinterconnection according to claim 1, all the limitations of which areincorporated by reference, wherein said patterned metal projectionsextend from both said integrated circuit device and said carrier.
 5. Theconductive interconnection according to claim 1, all the limitations ofwhich are incorporated by reference, wherein said polymer includes metalparticles.
 6. The conductive interconnection according to claim 1, allthe limitations of which are incorporated by reference, wherein saidpolymer comprises a thermoset polymer.
 7. The conductive interconnectionaccording to claim 1, all the limitations of which are incorporated byreference, wherein said polymer comprises a thermoplastic conductiveadhesive.
 8. A conductive interconnection for joining an integratedcircuit device to a device carrier, said conductive interconnectioncomprising: a polymer having a spherical shape between said integratedcircuit device and said device carrier; metal particles encapsulatedwithin said polymer; and dendrites comprising a plated coating on saidmetal particles.
 9. The conductive interconnection according to claim 8,all the limitations of which are incorporated by reference, wherein saiddendrites comprise a plated coating of palladium on said metalparticles.
 10. The conductive interconnection according to claim 8, allthe limitations of which are incorporated by reference, wherein saiddendrites have an irregular pattern within said polymer.
 11. Theconductive interconnection according to claim 8, all the limitations ofwhich are incorporated by reference, wherein said polymer comprises athermoset polymer.
 12. The conductive interconnection according to claim8, all the limitations of which are incorporated by reference, whereinsaid polymer comprises a thermoplastic conductive adhesive.
 13. Aconductive interconnection for joining an integrated circuit device to adevice carrier, said conductive interconnection comprising: a polymerhaving a spherical shape between said integrated circuit device and saiddevice carrier; and patterned metal projections extending towards saidpolymer from said integrated circuit device and from said devicecarrier, wherein said patterned metal projections each have a sameheight and extend partially into said polymer across the width of saidpolymer, and wherein said patterned metal projections have a cone-shapeand a triangular shape in cross-section.
 14. The conductiveinterconnection according to claim 13, all the limitations of which areincorporated by reference, wherein said polymer includes metalparticles.
 15. The conductive interconnection according to claim 13, allthe limitations of which are incorporated by reference, wherein saidpolymer comprises a thermoset polymer.
 16. The conductiveinterconnection according to claim 13, all the limitations of which areincorporated by reference, wherein said polymer comprises athermoplastic conductive adhesive.